specification for approval document : sig252012-xxx revision : a4 page : 1 of 11 sig252012-xxx sealed choke coil 1. features low profile 2.5mm x 2.0mm x 1.2mm low coil resistance with large currents. high magnetic shield construction should actualize high resolution for emc protection. 100% lead (pb) free meet rohs standard 2. application cellular phones, lcd displays, hdds, dvcs, dscs, pd as etc.. 3. type designation sig 252012 C xxx (1) (2) (3) where (1) series no : (2) size : 252012 = 2.5mm x 2.0mm x 1.2mm (3) inductance value : 3r3 = 3.3 m h 4. outline dimensions note this graph is only regard to dimensions spec. for o uter appearance, please refer to actual product. code dimensions (mm) l 2.0 0.1 w 2.5 0.1 t 1.2 max p 0.4 0.2 l p t w p
specification for approval document : sig252012-xxx revision : a4 page : 2 of 11 b c a 5. recommend land pattern dimensions the customer shall determine the land dimensions sh own above after confirming and safety. 6. specifications r dc ( m w ) heat rating current dc amps. idc ( a ) saturation current dc amps. isat ( a ) part number l0 inductance ( m h ) @ (0a) typical maximum typical maximum typical maximum sig252012-r22 0.22 31 38 3.50 3.15 4.50 4.05 SIG252012-R47 0.47 47 56 2.20 1.98 3.70 3.33 sig252012-r50 0.50 56 67 2.15 1.93 3.50 3.15 sig252012-r68 0.68 65 78 2.10 1.89 3.40 3.06 sig252012-1r0 1.0 73 88 1.80 1.62 2.70 2.43 sig252012-1r2 1.2 93 112 1.60 1.44 2.35 2.11 sig252012-1r5 1.5 105 126 1.50 1.35 2.20 1.98 sig252012-2r2 2.2 129 155 1.30 1.17 2.00 1.80 sig252012-3r3 3.3 227 272 1.00 0.90 1.60 1.44 sig252012-4r7 4.7 338 406 0.81 0.73 1.30 1.17 sig252012-5r6 5.6 375 450 0.72 0.65 1.15 1.03 sig252012-6r8 6.8 510 612 0.66 0.60 1.10 0.99 sig252012-8r2 8.2 590 708 0.62 0.55 0.95 0.85 sig252012-100 10.0 630 756 0.59 0.53 0.90 0.81 sig252012-220 22.0 2,170 2,604 0.30 0.27 0.50 0.45 * if you require another part number please contact w ith us. ** inductance tolerance 20% note 1. all test data is referenced to 25 ambient. note 2. idc : dc current (a) that will cause an approximate t of 40 note 3. isat : dc current (a) that will cause lo to drop ap proximately 30% note 4. operating temperature range -55 to + 125 note 5. the part temperature (ambient + temp rise ) should not exceed 125 under worse case operating conditions. circuit design , component placement, p wb trace size and thickness, airflow and other cooling provision all affect the part temperature. part temperature should be verified in the end application. note 6. the rated current as listed is either the saturatio n current or the heating current depending on which value is lower. a 2.1 b 0.8 c 2.6 unit : mm
specification for approval document : sig252012-xxx revision : a4 page : 3 of 11 6-1 current characteristic sig252012-r22 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 dc bias(amps) inductance( h) 0 20 40 60 80 100 120 temp rise( ) inductance( h) temp rise ( ) sig52012-r47 0.0 0.1 0.2 0.3 0.4 0.5 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 dc bias(amps) inductance( h) 0 20 40 60 80 100 temp rise( ) inductance( h) temp rise ( ) sig252012-r50 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 4.8 dc bias(amps) inductance( h) 0 20 40 60 80 100 temp rise( ) inductance( h) temp.rise( ) sig252012-r68 0.00 0.14 0.28 0.42 0.56 0.70 0.84 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 dc bias(amps) inductance( h) 0 20 40 60 80 100 temp rise( ) inductance( h) temp.rise( ) sig252012-1r0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 dc bias(amps) inductance( h) 0 20 40 60 80 100 temp rise( ) inductance( h) temp rise ( ) sig252012-1r2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 dc bias(amps) inductance( h) 0 20 40 60 80 100 120 140 temp rise( ) inductance( h) temp rise ( ) sig252012-1r5 0.0 0.3 0.6 0.9 1.2 1.5 1.8 0.0 0.5 1.0 1.5 2.0 2.5 dc bias(amps) inductance( h) 0 20 40 60 80 100 temp rise( ) inductance( h) temp rise ( ) sig252012-2r2 0.0 0.4 0.8 1.2 1.6 2.0 2.4 0.0 0.5 1.0 1.5 2.0 2.5 dc bias(amps) inductance( h) 0 20 40 60 80 100 temp rise( ) inductance( h) temp rise ( )
specification for approval document : sig252012-xxx revision : a4 page : 4 of 11 sig252012-3r3 0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 dc bias(amps) inductance( h) 0 20 40 60 80 100 temp rise( ) inductance( h) temp rise ( ) sig252012-4r7 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 dc bias(amps) inductance( h) 0 20 40 60 80 100 temp rise( ) inductance( h) temp rise ( ) sig252012-5r6 1.00 2.00 3.00 4.00 5.00 6.00 7.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 dc bias(amps) inductance( h) 0 20 40 60 80 100 temp rise( ) inductance( h) temp rise ( ) sig252012-6r8 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 dc bias(amps) inductance( h) 0 20 40 60 80 100 temp rise( ) inductance( h) temp.rise( ) sig252012-8r2 0.00 1.60 3.20 4.80 6.40 8.00 9.60 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 dc bias(amps) inductance( h) 0 20 40 60 80 100 temp rise( ) inductance( h) temp.rise( ) sig252012-100 0.0 1.5 3.0 4.5 6.0 7.5 9.0 10.5 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 dc bias(amps) inductance( h) 0 20 40 60 80 100 temp rise( ) inductance( h) temp.rise( ) sig252012-220 0.0 5.0 10.0 15.0 20.0 25.0 0.00 0.10 0.20 0.30 0.40 0.50 0.60 dc bias(amps) inductance( h ) 0 20 40 60 80 100 temp rise( ) inductance( h) temp rise ( )
|
